FSYE13A0D, FSYE13A0R
Data Sheet
May 1999
File Number
4741
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs speci鏗乧ally
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacri鏗乧ed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
鏗乪ld-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Features
鈥?12A, 100V, r
DS(ON)
= 0.160鈩?/div>
鈥?Total Dose
- Meets Pre-RAD Speci鏗乧ations to 100K RAD (Si)
鈥?Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
鈥?Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
鈥?Photo Current
- 1.5nA Per-RAD(Si)/s Typically
鈥?Neutron
- Maintain Pre-RAD Speci鏗乧ations
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Symbol
D
G
S
Packaging
SMD.5
Ordering Information
RAD LEVEL
10K
10K
100K
100K
100K
SCREENING LEVEL
Commercial
TXV
Commercial
TXV
Space
PART NUMBER/BRAND
FSYE13A0D1
FSYE13A0D3
FSYE13A0R1
FSYE13A0R3
FSYE13A0R4
Formerly available as type TA17696.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
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Copyright
漏
Intersil Corporation 1999
INTERSIL
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