FSYC9055D, FSYC9055R
July 1999
Features
鈥?Total Dose
UCT
CT
ROD PRODU
P
E
ETE
SOL BSTITUT C9055R
OB SU
STY
IBLE 9055D, F
S
POS STYC
F
Radiation Hardened, SEGR Resistant
P-Channel Power MOSFETs
Description
The Discrete Products Operation of Harris Semiconductor
has developed a series of Radiation Hardened MOSFETs
speci鏗乧ally designed for commercial and military space
applications. Enhanced Power MOSFET immunity to Single
Event Effects (SEE), Single Event Gate Rupture (SEGR) in
particular, is combined with 100K RADS of total dose hard-
ness to provide devices which are ideally suited to harsh
space environments. The dose rate and neutron tolerance
necessary for military applications have not been sacri鏗乧ed.
The Harris portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings. Numer-
ous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
鏗乪ld-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Harris Semiconductor for any
desired deviations from the data sheet.
鈥?59A, -60V, r
DS(ON)
= 0.027鈩?/div>
- Meets Pre-RAD Speci鏗乧ations to 100K RAD (Si)
鈥?Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
鈥?Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
鈥?Photo Current
- 6nA Per-RAD(Si)/s Typically
鈥?Neutron
- Maintain Pre-RAD Speci鏗乧ations
for 3E13 Neutrons/cm
2
- Usable to 3E14Neutrons/cm
2
g
[ /Title
(FSYC
9055D,
FSYC
9055R)
/Sub-
ject
(Radia-
tion
Hard-
ened,
SEGR
Resis-
tant
P-
Chan-
nel
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(Radia-
tion
Hard-
ened,
SEGR
Resis-
tant P-
Chan-
nel
Power
MOS-
FETs)
/Cre-
ator ()
/DOCI
Ordering Information
RAD LEVEL
10K
10K
100K
100K
100K
SCREENING LEVEL
Commercial
TXV
Commercial
TXV
Space
PART NUMBER/BRAND
FSYC9055D1
FSYC9055D3
FSYC9055R1
FSYC9055R3
FSYC9055R4
Symbol
D
Formerly available as type TA17750.
G
S
Package
SMD-2
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
漏
Harris Corporation 1999
File Number
4525.1
1
INTERSIL
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