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FSS234R4 Datasheet

  • FSS234R4

  • 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Pow...

  • 8頁

  • INTERSIL   INTERSIL

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FSS234D, FSS234R
June 1998
6A, 250V, 0.600 Ohm, Rad Hard,
SEGR Resistant, N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs speci鏗?
cally designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military
applications have not been sacri鏗乧ed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
鏗乪ld-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications exposed
to radiation environments such as switching regulation,
switching converters, motor drives, relay drivers and drivers
for high-power bipolar switching transistors requiring high
speed and low gate drive power. This type can be operated
directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Features
鈥?6A, 250V, r
DS(ON)
=
0.
600鈩?/div>
鈥?Total Dose
- Meets Pre-RAD Speci鏗乧ations to 100K RAD (Si)
鈥?Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
鈥?Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
鈥?Photo Current
- 4.0nA Per-RAD(Si)/s Typically
鈥?Neutron
- Maintain Pre-RAD Speci鏗乧ations
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Ordering Information
RAD LEVEL
10K
10K
100K
100K
100K
SCREENING LEVEL
Commercial
TXV
Commercial
TXV
Space
PART NUMBER/BRAND
FSS234D1
FSS234D3
FSS234R1
FSS234R3
FSS234R4
Symbol
D
G
Formerly available as type TA17638.
S
Package
TO-257AA
S
D
G
CAUTION: Beryllia Warning per MIL-S-19500
refer to package speci鏗乧ations.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
File Number
4053.2
3-83

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