FSPYC164R, FSPYC164F
Data Sheet
December 2001
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Fairchild Star*Power Rad Hard
MOSFETs have been specifically
TM
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
system designer both extremely low r
DS(ON)
and Gate
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300 krads
while maintaining the guaranteed performance for Single
Event Effects (SEE) which the Fairchild FS families have
always featured.
The Fairchild portfolio of Star*Power FETs includes a family
of devices in various voltage, current and package styles.
The Star*Power family consists of Star*Power and
Star*Power Gold products. Star*Power FETs are optimized
for total dose and r
DS(ON)
performance while exhibiting SEE
capability at full rated voltage up to an LET of 37. Star*Power
Gold FETs have been optimized for SEE and Gate Charge
providing SEE performance to 80% of the rated voltage for
an LET of 82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
Formerly available as type TA45215W.
Features
鈥?70A (Current Limited by Package), 150V, r
DS(ON)
= 0.021鈩?/div>
鈥?UIS Rated
鈥?Total Dose
- Meets Pre-Rad Specifications to 100 krad (Si)
- Rated to 300 krad (Si)
鈥?Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 100% of Rated Breakdown and
V
GS
of 10V Off-Bias
鈥?Dose Rate
- Typically Survives 3E9 Rad (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
鈥?Photo Current
- 14nA Per-Rad (Si)/s Typically
鈥?Neutron
- Maintain Pre-Rad Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Symbol
D
G
S
Packaging
SMD2
Ordering Information
RAD LEVEL
10K
100K
100K
300K
300K
SCREENING LEVEL
PART NUMBER/BRAND
Engineering Samples FSPYC164D1
TXV
Space
TXV
Space
FSPYC164R3
FSPYC164R4
FSPYC164F3
FSPYC164F4
漏2001 Fairchild Semiconductor Corporation
FSPYC164R, FSPYC164F Rev. B
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