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FSB660A Datasheet

  • FSB660A

  • PNP Low Saturation Transistor

  • 7頁(yè)

  • FAIRCHILD

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FSB660/FSB660A
FSB660 / FSB660A
C
E
B
SuperSOT
TM
-3 (SOT-23)
PNP Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 2A
continuous.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
stg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A = 25擄C unless otherwise noted
FSB660/FSB660A
60
60
5
2
-55 to +150
Units
V
V
V
A
擄C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150擄C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
T
A = 25擄C unless otherwise noted
Max
Characteristic
FSB660/FSB660A
P
D
R
胃JA
Total Device Dissipation
Thermal Resistance, Junction to Ambient
500
250
mW
擄C/W
Units
漏
2000 Fairchild Semiconductor International
FSB660/FSB660A Rev. B

FSB660A 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP

  • 2A

  • 60V

  • 300mV @ 200mA，2A

  • -

  • 250 @ 500mA，2V

  • 500mW

  • 75MHz

  • 表面貼裝

  • TO-236-3，SC-59，SOT-23-3

  • 3-SSOT

  • 帶卷 (TR)

  • FSB660A-NDFSB660ATR

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