FRX130D, FRX130R,
FRX130H
April 1998
Radiation Hardened
N-Channel Power MOSFETs
Description
The Intersil has designed a series of SECOND GENERA-
TION hardened power MOSFETs of both N-Channel and
P-Channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25m鈩? Total
dose hardness is offered at 100K RAD (Si) and 1000K RAD
(Si) with neutron hardness ranging from 1E13n/cm
2
for
500V product to 1E14n/cm
2
for 100V product. Dose rate
hardness (GAMMA DOT) exists for rates to 1E9 without
current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to exhibit mini-
mal characteristic changes to total dose (GAMMA) and
neutron (n
o
) exposures. Design and processing efforts are
also directed to enhance survival to heavy ion (SEU) and/or
dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages
other than shown above. Reliability screening is available
as either non TX (commercial), TX equivalent of MIL-S-
19500, TXV equivalent of MIL-S-19500, or space equiva-
lent of MIL-S-19500. Contact the Intersil High-Reliability
Marketing group for any desired deviations from the data
sheet.
Features
鈥?6A, 100V, r
DS(ON)
=
0.180
鈩?/div>
鈥?Second Generation Rad Hard MOSFET Results From
New Design Concepts
鈥?Gamma
- Meets Pre-RAD Speci鏗乧ations to 100K RAD (Si)
- De鏗乶ed End-Point Specs at 300K RAD (Si) and
1000K RAD (Si)
- Performance Permits Limited Use to 3000K RAD (Si)
鈥?Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
鈥?Photo Current
- 1.50nA Per-RAD (Si)/s Typically
鈥?Neutron
- Maintain Pre-RAD Speci鏗乧ations
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Ordering Information
PART NUMBER
FRX130D1
FRX130D3
FRX130R1
FRX130R3
FRX130R4
FRX130H4
PACKAGE
18 Ld CLCC
18 Ld CLCC
18 Ld CLCC
18 Ld CLCC
18 Ld CLCC
18 Ld CLCC
BRAND
FRX130D1
FRX130D3
FRX130R1
FRX130R3
FRX130R4
FRX130H4
Symbol
D
G
S
Package
18 LEAD CLCC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999
File Number
3144.3
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