鈥?/div>
15A, 500V, R
DS(on)
= 0.48鈩?@V
GS
= 10 V
Low gate charge (typical 43nC)
Low C
rss
(typical 20pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Fast recovery body diode (typical 100ns)
RoHS compliant
廬
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
TO-3P
G D S
FQA Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
Parameter
FQA13N50CF
500
15
9.5
60
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8''"from case for 5 seconds
860
15
21.8
4.5
218
1.56
-55 to +150
300
Thermal Characteristics
Symbol
R
胃JC
R
胃JS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.58
--
40
Units
擄C/W
擄C/W
擄C/W
漏2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQA13N50CF Rev. A1