FPN660/FPN660A
FPN660/FPN660A
PNP Low Saturation Transistor
鈥?These devices are designed for high current gain and low saturation
voltage with collector currents up to 3.0A continuous.
鈥?Sourced from process PA.
C
BE
TO-226
Absolute Maximum Ratings
T
A
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
FPN660
60
80
5
3
-55 ~ +150
FPN660A
60
60
5
3
-55 ~ +150
Units
V
V
V
A
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150擄C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltage (V) and currents (A) are negative polarity for PNP transistors
Electrical Characteristics
T
A
=25擄C unless otherwise noted
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Test Conditions
I
C
= 10mA, I
B
= 0
I
E
= 100碌A(chǔ), I
E
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T
A
= 100擄C
V
EB
= 4.0V, I
C
= 0
I
C
= 100mA, V
CE
= 2.0V
I
C
= 500mA, V
CE
= 2.0V
I
C
= 1.0A, V
CE
= 2.0V
I
C
= 2.0A, V
CE
= 2.0V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 1.0A, I
B
= 100mA
I
C
= 2.0A, I
B
= 200mA
I
C
= 1.0A, I
B
= 100mA
I
C
= 1.0A, V
CE
= 2.0V
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 100mA, V
CE
= 5.0V,
f = 100MHz
75
FPN660
FPN660A
70
100
250
80
40
FPN660
FPN660A
Min.
55
80
60
5.0
100
10
100
Typ.
Max.
Units
V
V
V
V
nA
碌A(chǔ)
nA
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
On Characteristics *
FPN660
FPN660A
300
550
300
450
400
1.25
1.0
45
mV
mV
mV
V
V
pF
MHz
V
BE
(sat)
V
BE
(on)
C
obo
f
T
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Transition Frequency
Small Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
NOTE:
All voltage (V) and currents (A) are negative polarity for PNP transistors.
漏2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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