FPN430 / FPN430A
FPN430
FPN430A
C
TO-226
B
E
PNP Low Saturation Transistor
These devices are designed for high current gain and low
saturation voltage with collector currents up to 2.0 A continuous.
Sourced from Process PB.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
TA = 25擄C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
30
35
5.0
2.0
-55 to +150
Units
V
V
V
A
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
胃JC
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
FPN430 / FPN430A
1.0
50
125
Units
W
擄C/W
擄C/W
錚?/div>
1999 Fairchild Semiconductor Corporation
1
2
3
4
