SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 4 聳 FEBRUARY 1997
7
FMMT4400
FMMT4401
C
B
E
PARTMARKING DETAILS:
FMMT4400 - 1KZ
FMMT4401 - 1L
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
FMMT4400
MIN.
40
60
6
0.1
0.1
20
40
50
20
20
40
80
100
40
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
FMMT4401
MIN.
40
60
6
0.1
0.1
VALUE
60
40
6
600
330
-55 to +150
UNIT
V
V
V
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated)
PARAMETER
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Current
Collector-Emitter
Cut-Off Current
Base Cut-Off
Current
Static Forward
Current
TransferRatio
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Transition
Frequency
Output Capacitance
Input Capacitance
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
BEX
h
FE
MAX.
MAX.
UNIT CONDITIONS
V
V
V
I
C
=1mA, I
B
=0
I
C
=0.1mA, I
E
=0
I
E
=0.1mA, I
C
=0
V
EB(off)
=0.4V
V
EB(off)
=3V
碌
A V
CE
=35V
碌
A V
CE
=35V
150
0.4
0.75
300
0.4
0.75
V
V
V
V
I
C
=0.1mA, V
CE
=1V
I
C
=1mA, V
CE
=1V
I
C
=10mA, V
CE
=1V
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=2V*
I
C
=150mA,I
B
=15mA*
I
C
=500mA,I
B
=50mA*
I
C
=150mA,I
B
=15mA*
I
C
=500mA,I
B
=50mA*
V
CE(sat)
V
BE(sat)
f
T
C
obo
C
ibo
0.75
200
0.95
1.2
0.75
250
0.95
1.2
MHz I
C
=20mA,V
CE
=10V
f=100kHz
6.5
30
pF V
CB
=5 V,I
E
=0
f=100kHz
pF V
BE
=0.5V, I
C
=0
f=100kHz
6.5
30
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
next
1
2
