SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
ISSUE 3 聳 FEBRUARY 1996
FEATURES
* Fast switching
PARTMARKING DETAILS
FMMT2222
聳 1BZ
FMMT2222A 聳 1P
FMMT2222R
聳 2P
FMMT2222AR 聳 3P
COMPLEMENTARY TYPES
FMMT2222
聳 FMMT2907
FMMT2222A 聳 FMMT2907A
FMMT2222
FMMT2222A
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
FMMT2222
60
30
5
600
330
-55 to +150
FMMT2222A
75
40
6
UNIT
V
V
V
mA
mW
擄C
Operating and Storage Temperature Range T
j
:T
stg
PARAMETER
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
60
75
V
I
C
=10
碌
A, I
E
=0
30
5
10
10
I
EBO
I
CEX
V
CE(sat)
V
BE(sat)
h
FE
0.6
35
50
75
35
100
50
30
10
10
0.3
1.0
2.0
2.6
40
6
10
10
10
10
0.3
1.0
1.2
2.0
V
V
碌
A
I
C
=10mA, I
B
=0
I
E
=10
碌
A, I
C
=0
V
CB
=50V, I
E
=0
V
CB
=60V, I
E
=0
V
CB
=50V, I
E
=0, T
amb
=150擄C
V
CB
=60V, I
E
=0, T
amb
=150擄C
V
EB
=3V, I
C
=0
V
CE
=60V, V
EB(off)
=3V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
I
C
=0.1mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V, T
amb
=-55擄C
I
C
=150mA, V
CE
=10V*
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=10V*
nA
nA
碌
A
nA
nA
V
V
V
V
0.6
35
50
75
35
100
50
40
300
300
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
1
2
