100V, 30A Schottky barrier diode in TO220F package
FME-230A
sAbsolute
maximum ratings
Parameter
V
RM
I
F(AV)
I
FSM
I
2
t
Tj
Tstg
Ratings
100
30
150
112
鈥?40 to +150
鈥?40 to +150
Unit
V
A
A
A
2
s
擄C
擄C
10ms Half-cycle sinewave Single Shot
Conditions
sElectrical
characteristics
Parameter
V
F
I
R
H.I
R
Rth( j-c)
Ratings
0.85
1.5max
150max
4.0max
Unit
V
mA
mA
擄C/W
I
F
=15A
V
R
=V
RM
(Ta = 25擄C)
Conditions
Tj =150擄C
,
V
R
=V
RM
Junction-to-case
35
30
Forward power loss P
F
(W)
25
20
15
10
I
F(AV)
鈥揚
F
Characteristic
100
Tj =150潞C
t
T
V
F
鈥?I
F
Characteristic (Typ.)
30
Average forward current I
F(AV)
(A)
25
T
C
鈥揑
F(AV)
Characteristic
V
R
=0V
t /T
=
1/2
t /T
=
1/6
20
15
10
Tj =150潞C
5
0
t
T
0
50
100
150
t /T
=
1/ 3, Sinewave
D.C.
t /T
=
1/6
t /T
=
1/ 3, Sinewave
Forward current I
F
(A)
10
1
0.1
Ta=150擄C
125擄C
100擄C
60擄C
25擄C
0
0.4
0.8
1.2
1.6
t /T
=
1/2
5
0
0
5
10
15
20
25
30
Average forward current I
F(AV)
(A)
D.C.
0.01
0.001
Forward voltage V
F
(V)
Case temperature T
C
(擄C)
30
25
20
V
R
鈥揚
R
Characteristic
Tj =150潞C
t
T
V
R
鈥?I
R
Characteristic (Typ.)
100
10
Reverse current I
R
(mA)
125擄C
100擄C
1
0.1
0.01
0.001
60擄C
Average forward current I
F(AV)
(A)
Ta=150擄C
30
25
T
C
鈥揑
F(AV)
Characteristic
Sinewave
1鈥?t /T=1/2
t
T
V
R
=100V
Tj =150潞C
Reverse power loss P
R
(W)
1鈥?t /T
=
5/6
20
1鈥搕 /T=1/3
15
10
5
0
1鈥搕 /T=1/6
0
50
100
150
D.C.
1鈥?t /T
=
2/3
15
1鈥?t /T
=
1/2
10
5
0
0
20
40
60
Sinewave
80
100
25擄C
0.0001
0
20
40
60
80
100
Reverse voltage V
R
(V)
Reverse voltage V
R
(V)
Case temperature T
C
(擄C)
External dimensions
(Unit: mm)
Flammability:
UL94V-0 or equivalent
3.3
4.4 4.0
10.0
4.2
2.8
C0.5
Reference data
V
F
Distribution
(I
F
=15A)
0.84
0.83
0.82
0.81
0.80
0.79
0.78
0.77
0.76
0.75
0
10
20
30
N (pcs)
40
50
50
45
40
35
30
25
20
15
10
5
0
10
20
30
N (pcs)
40
50
I
R
Distribution
(V
R
=100V, Ta=25擄C)
60
58
56
54
52
50
48
46
44
42
40
I
R
Distribution
(V
R
=100V, Ta=150擄C)
16.9
0.8
13.5
鹵0.5
3.9
1.35
0.85
2.54
2.54
0.45
鈥?.1
+0.2
2.4
I
R
(mA)
I
R
(碌A(chǔ))
V
F
(V)
0
10
20
30
N (pcs)
40
50
1
