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FM25L16-G Datasheet

  • FM25L16-G

  • 16Kb FRAM Serial 3V Memory

  • 151.08KB

  • 14頁(yè)

  • ETC

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Pre-Production
FM25L16
16Kb FRAM Serial 3V Memory
Features
16K bit Ferroelectric Nonvolatile RAM
鈥?/div>
Organized as 2,048 x 8 bits
鈥?/div>
Unlimited Read/Write Cycles
鈥?/div>
45 Year Data Retention
鈥?/div>
NoDelay鈩?Writes
鈥?/div>
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
鈥?/div>
Up to 20 MHz Frequency
鈥?/div>
Direct Hardware Replacement for EEPROM
鈥?/div>
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
鈥?/div>
Hardware Protection
鈥?/div>
Software Protection
Low Power Consumption
鈥?/div>
Low Voltage Operation 2.7-3.6V
鈥?/div>
1
碌A(chǔ)
Standby Current
Industry Standard Configuration
鈥?/div>
Industrial Temperature -40擄C to +85擄C
鈥?/div>
鈥淕reen鈥?8-pin SOIC and 8-pin DFN Packages
鈥?/div>
DFN Footprint Conforms to TSSOP-8
Description
The FM25L16 is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 45 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25L16 performs
write operations at bus speed. No write delays are
incurred. The next bus cycle may commence
immediately without the need for data polling. The
next bus cycle may start immediately. In addition, the
product offers virtually unlimited write endurance,
orders of magnitude more endurance than EEPROM.
Also, FRAM exhibits much lower power during
writes than EEPROM since write operations do not
require an internally elevated power supply voltage
for write circuits.
These capabilities make the FM25L16 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25L16 provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25L16 uses the high-speed SPI
bus, which enhances the high-speed write capability
of FRAM technology. Device specifications are
guaranteed over an industrial temperature range of
-40擄C to +85擄C.
This is a product in the pre-production phase of development. Device
characterization is complete and Ramtron does not expect to change
the specifications. Ramtron will issue a Product Change Notice if
any specification changes are made.
Rev. 2.0
Mar. 2005
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
/CS
SO
/WP
VSS
1
2
3
4
Top View
8
7
6
5
VDD
/HOLD
SCK
SI
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
Ordering Information
FM25L16-G
FM25L16-DG
鈥淕reen鈥?8-pin SOIC
鈥淕reen鈥?8-pin DFN
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
www.ramtron.com
Page 1 of 14

FM25L16-G 產(chǎn)品屬性

  • Ramtron

  • F-RAM

  • 16 KB

  • 2 K x 8

  • SPI

  • 2.7 V to 3.6 V

  • - 40 C to + 85 C

  • SMD/SMT

  • SOIC-8

  • Tube

  • 100

FM25L16-G相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 t...
    RECTRON
  • 英文版
    Silicon epitaxial planer type
    FORMOSA
  • 英文版
    SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 t...
    RECTRON [R...
  • 英文版
    Silicon epitaxial planer type
    FORMOSA [F...
  • 英文版
    SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
    RECTRON [R...
  • 英文版
    SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to...
    RECTRON [R...
  • 英文版
    4Kb FRAM Serial Memory
    ETC
  • 英文版
    4Kb FRAM Serial Memory
    ETC [ETC]
  • 英文版
    Chip Schottky Barrier Diodes - Silicon epitaxial planer type
    FORMOSA
  • 英文版
    Chip Schottky Barrier Diodes - Silicon epitaxial planer type
    FORMOSA [F...
  • 英文版
    Chip Schottky Barrier Diodes - Silicon epitaxial planer type
    FORMOSA
  • 英文版
    Chip Schottky Barrier Diodes - Silicon epitaxial planer type
    FORMOSA [F...
  • 英文版
    Silicon epitaxial planer type
    FORMOSA
  • 英文版
    Silicon epitaxial planer type
    FORMOSA [F...
  • 英文版
    Chip Schottky Barrier Diodes - Silicon epitaxial planer type
    FORMOSA
  • 英文版
    Chip Schottky Barrier Diodes - Silicon epitaxial planer type
    FORMOSA [F...
  • 英文版
    16Kb FRAM Serial Memory
    ETC
  • 英文版
    16Kb FRAM Serial Memory
    ETC [ETC]
  • 英文版
    256Kb FRAM Serial 5V Memory
    ETC
  • 英文版
    256Kb FRAM Serial 5V Memory
    ETC [ETC]

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