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FM25L04-S Datasheet

  • FM25L04-S

  • 4Kb FRAM Serial 3V Memory

  • 188.15KB

  • 12頁(yè)

  • ETC

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Pre-Production
FM25L04
4Kb FRAM Serial 3V Memory
Features
4K bit Ferroelectric Nonvolatile RAM
鈥?/div>
Organized as 512 x 8 bits
鈥?/div>
Unlimited Read/Write Cycles
鈥?/div>
45 Year Data Retention
鈥?/div>
NoDelay鈩?Writes
鈥?/div>
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
鈥?/div>
Up to 14 MHz Frequency
鈥?/div>
Direct Hardware Replacement for EEPROM
鈥?/div>
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
鈥?/div>
Hardware Protection
鈥?/div>
Software Protection
Low Power Consumption
鈥?/div>
Low Voltage Operation 2.7-3.6V
鈥?/div>
1
碌A(chǔ)
Standby Current
Industry Standard Configuration
鈥?/div>
Industrial Temperature -40擄C to +85擄C
鈥?/div>
8-pin SOIC
鈥?/div>
鈥淕reen鈥?8-pin SOIC
Description
The FM25L04 is a 4-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 45 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25L04 performs
write operations at bus speed. No write delays are
incurred. The next bus cycle may commence
immediately without the need for data polling. The
next bus cycle may start immediately. In addition, the
product offers virtually unlimited write endurance.
Also, FRAM exhibits much lower power
consumption than EEPROM.
These capabilities make the FM25L04 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of EEPROM can
cause data loss.
The FM25L04 provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25L04 uses the high-speed SPI
bus, which enhances the high-speed write capability
of FRAM technology. Device specifications are
guaranteed over an industrial temperature range of
-40擄C to +85擄C.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
Ordering Information
FM25L04-S
FM25L04-G
8-pin SOIC
鈥淕reen鈥?8-pin SOIC
This is a product in the pre-production phase of development. Device
characterization is complete and Ramtron does not expect to change the
specifications. Ramtron will issue a Product Change Notice if any
specification changes are made.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
www.ramtron.com
Rev. 2.0
May 2005
Page 1 of 12

FM25L04-S 產(chǎn)品屬性

  • Ramtron

  • F-RAM

  • 4 KB

  • 512 x 8

  • SPI

  • 2.7 V to 3.6 V

  • - 40 C to + 85 C

  • SMD/SMT

  • SOIC-8

  • Tube

  • 100

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