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FM18L08-70-S Datasheet

  • FM18L08-70-S

  • 256Kb 2.7-3.6V Bytewide FRAM Memory

  • 11頁

  • ETC

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Preliminary
FM18L08
256Kb 2.7-3.6V Bytewide FRAM Memory
Features
256K bit Ferroelectric Nonvolatile RAM
鈥?/div>
Organized as 32,768 x 8 bits
鈥?/div>
10 year data retention at 85擄 C
鈥?/div>
Unlimited read/write cycles
鈥?/div>
NoDelay鈩?write
鈥?/div>
Advanced high-reliability ferroelectric process
Superior to Battery-backed SRAM
鈥?/div>
No battery concerns
鈥?/div>
Monolithic reliability
鈥?/div>
True surface mount solution, no rework steps
鈥?/div>
Superior for moisture, shock, and vibration
鈥?/div>
Resistant to negative voltage undershoots
SRAM & EEPROM Compatible
鈥?/div>
JEDEC 32Kx8 SRAM & EEPROM pinout
鈥?/div>
70 ns access time
鈥?/div>
130 ns cycle time
鈥?/div>
Equal access & cycle time for reads and writes
Low Power Operation
鈥?/div>
2.7V to 3.6V operation
鈥?/div>
15 mA active current
鈥?/div>
15
碌A(chǔ)
standby current
Industry Standard Configuration
鈥?/div>
Industrial temperature -40擄 C to +85擄 C
鈥?/div>
28-pin SOP or DIP
Pin Configuration
Description
The FM18L08 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile but operates in other respects as a RAM.
It provides data retention for 10 years while
eliminating the reliability concerns, functional
disadvantages and system design complexities of
battery-backed SRAM. Fast-write time and practically
unlimited read/write endurance make it superior to
other types of nonvolatile memory and a good
substitute for ordinary SRAM.
In-system operation of the FM18L08 is very similar to
other RAM based devices. Memory read- and write-
cycles require equal times. The FRAM memory,
however, is nonvolatile due to its unique ferroelectric
memory process. Unlike BBSRAM, the FM18L08 is a
truly monolithic nonvolatile memory. It provides the
same functional benefits of a fast write without the
serious disadvantages associated with modules and
batteries or hybrid memory solutions.
These capabilities make the FM18L08 ideal for
nonvolatile memory applications requiring frequent or
rapid writes in a bytewide environment. The
availability of a true surface-mount package improves
the manufacturability of new designs, while the DIP
package facilitates simple design retrofits. The
FM18L08 offers guaranteed operation over an
industrial temperature range of -40擄C to +85擄C.
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
VDD
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
Ordering Information
FM18L08-70-S
70 ns access, 28-pin SOP
FM18L08-70-P
70 ns access, 28-pin DIP
This data sheet contains specifications for a product under development.
Characterization is not complete; specifications may change without notice.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000, Fax (719) 481-7058
www.ramtron.com
23 March 2001
1/11

FM18L08-70-S 產(chǎn)品屬性

  • Ramtron

  • F-RAM

  • 256 KB

  • 32 K x 8

  • Parallel

  • 3 V to 3.6 V

  • - 40 C to + 85 C

  • SMD/SMT

  • SOIC-28

  • Tube

  • 70 ns

  • 27

FM18L08-70-S相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Silicon epitaxial planer type
    FORMOSA
  • 英文版
    Chip Schottky Barrier Diodes - Silicon epitaxial planer type
    FORMOSA [F...
  • 英文版
    Silicon epitaxial planer type
    FORMOSA [F...
  • 英文版
    256Kb Bytewide FRAM Memory
    ETC
  • 英文版
    256Kb Bytewide F-RAM Memory
    Ramtron Interna...
  • 英文版
    256Kb Bytewide FRAM Memory
    ETC [ETC]
  • 英文版
    SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 80 to...
    RECTRON [R...
  • 英文版
    HIGH VOLTAGE RECTIFIER
    RECTRON [R...
  • 英文版
    Silicon epitaxial planer type
    FORMOSA
  • 英文版
    Silicon epitaxial planer type
    FORMOSA [F...
  • 英文版
    Chip Schottky Barrier Diodes - Silicon epitaxial planer type
    FORMOSA
  • 英文版
    Chip Schottky Barrier Diodes - Silicon epitaxial planer type
    FORMOSA [F...
  • 英文版
    Chip Schottky Barrier Diodes - Silicon epitaxial planer type
    FORMOSA
  • 英文版
    Chip Schottky Barrier Diodes - Silicon epitaxial planer type
    FORMOSA [F...
  • 英文版
    256Kb 2.7-3.6V Bytewide FRAM Memory
    ETC
  • 英文版
    256Kb Bytewide FRAM Memory
    Ramtron Interna...
  • 英文版
    256Kb 2.7-3.6V Bytewide FRAM Memory
    ETC [ETC]
  • 英文版
    (Rev. 1.0)
    Ramtron
  • 英文版
    Chip Schottky Barrier Diodes - Silicon epitaxial planer type
    FORMOSA
  • 英文版
    Chip Schottky Barrier Diodes - Silicon epitaxial planer type
    FORMOSA [F...

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