鈥?/div>
Push-Pull Configuration
High Power Output: 120W (Typ.)
High PAE: 44%.
Broad Frequency Range: 1800 to 2000 MHz.
Suitable for class AB operation.
DESCRIPTION
The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in PCS/PCN base station amplifiers
as it offers high gain, long term reliability and ease of use.
Fujitsu鈥檚 stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25擄C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Tc = 25擄C
Condition
Rating
15
-5
187.5
-65 to +175
+175
Unit
V
V
W
擄C
擄C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 156.0 and -57.6 mA respectively with
gate resistance of 10鈩?
3. The operating channel temperature (Tch) should not exceed 145擄C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25擄C)
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain
Drain Current
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IU
Symbol
I
DSS
gm
V
p
V
GSO
P
out
GL
I
DSR
畏
add
R
th
Conditions
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 28.8A
V
DS
= 5V, I
DS
= 2.88A
I
GS
= -2.88mA
V
DS
= 12V
f=1.96 GHz
I
DS
= 5.0A
Pin = 41.0dBm
Channel to Case
Limits
Min. Typ. Max.
-
-
-1.0
-5
49.8
10.0
-
-
-
48
24
-2.0
-
50.8
11.0
20
44
0.6
72
-
-3.5
-
-
-
30
-
0.8
Unit
A
S
V
V
dBm
dB
A
%
擄C/W
Edition 1.7
December 1999
1
1
2
3
4
