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FJZ945 Datasheet

  • FJZ945

  • Audio Frequency Amplifier & High Frequency OSC.

  • 5頁

  • FAIRCHILD

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FJZ945
FJZ945
Audio Frequency Amplifier & High
Frequency OSC.
鈥?Complement to FJZ733
鈥?Collector-Base Voltage : V
CBO
=60V
鈥?High Current Gain Bandwidth Product : f
T
=300MHz (Typ.)
1
3
2
SOT-623F
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
60
50
5
150
100
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
I
C
=100碌A(chǔ), I
E
=0
I
C
=10mA, I
B
=0
I
E
=10碌A(chǔ), I
C
=0
V
CB
=40V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=6V, I
C
=1.0mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.5mA
f=1KHz, R
S
=500鈩?/div>
40
0.15
300
2.5
4.0
Min.
60
50
5
0.1
0.1
700
0.3
V
MHz
pF
dB
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
Thermal Characteristics
T
C
=25擄C unless otherwise noted
Symbol
R
胃JA
Parameter
Thermal Resistance, Junction to Ambient
Max.
1250
Units
擄C/W
h
FE
Classification & Marking
Classification
h
FE
Marking
R
40 ~ 80
C2
O
70 ~ 140
C3
Marking
Y
120 ~ 240
C1
G
200 ~ 400
C4
L
350 ~ 700
C5
C1
漏2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003

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