FJPF6806D
FJPF6806D
High Voltage Color Display Horizontal
Deflection Output (Damper Diode Built In)
鈥?High Collector-Base Breakdown Voltage : BV
CBO
= 1500V
鈥?High Switching Speed : t
F
(typ.) =0.1碌s
鈥?For Color TV
1
TO-220F
2.Collector
3.Emitter
1.Base
Equivalent Circuit
C
B
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
50鈩?typ.
E
Rating
1500
750
6
6
12
40
150
-55 ~ 150
Units
V
V
V
A
A
W
擄C
擄C
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics
T
C
=25擄C
unless otherwise noted
Symbol
I
CES
I
CBO
I
EBO
BV
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
V
F
t
STG
*
t
F
*
Parameter
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Base-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Damper Diode Turn On Voltage
Storage Time
Fall Time
Test Conditions
V
CB
=1400V, R
BE
=0
V
CB
=800V, I
E
=0
V
EB
=4V, I
C
=0
I
E
=300mA, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=4A
I
C
=4A, I
B
=1A
I
C
=4A, I
B
=1A
I
F
= 4.5A
V
CC
=200V, I
C
=4A, R
L
=50
鈩?/div>
I
B1
=1.0A, I
B2
= - 2.0A
40
6
8
4
7
5
1.5
2
3
0.2
V
V
V
碌s
碌s
Min
Typ
Max
1
10
200
Units
mA
碌A(chǔ)
mA
V
* Pulse Test: PW=20碌s, duty Cycle=1% Pulsed
Thermal Characteristics
T
C
=25擄C
unless otherwise noted
Symbol
R
胃jC
Parameter
Thermal Resistance, Junction to Case
Typ
Max
3.1
Units
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
1
2
3
4
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