鈥?/div>
High Current Capability : I
C
= -10A
High Power Dissipation
Wide S.O.A
Complement to FJAF4310
1
TO-3PF
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current (DC)
Collector Dissipation (T
C
=25擄C)
Junction to Case
Junction Temperature
Storage Temperature
Value
-200
-140
-6
-10
-1.5
80
1.33
150
- 55 ~ 150
Units
V
V
V
A
A
W
擄C/W
擄C
擄C
R
胃JC
T
J
T
STG
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
C
ob
f
T
* Pulse Test : PW=20碌s
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
*
DC
Test Condition
I
C
=-5mA, I
E
=0
I
C
=-50mA, R
BE
=鈭?/div>
I
E
=-5mA, I
C
=0
V
CB
=-200V, I
E
=0
V
EB
=-6V, I
C
=0
V
CE
=-4V, I
C
=-3A
I
C
=-5A, I
B
=-0.5A
V
CB
=-10V, f=1MHz
V
CE
=-5V, I
C
=-1A
Min.
-200
-140
-6
Typ.
Max.
Units
V
V
V
-10
-10
50
400
30
180
-0.5
碌A
碌A
V
pF
MHz
Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
h
FE
Classification
Classification
h
FE
R
50 ~ 100
O
70 ~ 140
Y
90 ~ 180
漏2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
1
2
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