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FGH50N6S2 Datasheet

  • FGH50N6S2

  • 600V, SMPS II Series N-Channel IGBT

  • 171.26KB

  • 8頁

  • FAIRCHILD

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FGH50N6S2
August 2003
FGH50N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH50N6S2 is a Low Gate Charge, Low Plateau Volt-
age SMPS II IGBT combining the fast switching speed of
the SMPS IGBTs along with lower gate charge, plateau
voltage and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high volt-
age switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially de-
signed for:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
Features
鈥?100kHz Operation at 390V, 40A
鈥?200kHZ Operation at 390V, 25A
鈥?600V Switching SOA Capability
鈥?Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125
o
C
鈥?Low Gate Charge . . . . . . . . . 70nC at V
GE
= 15V
鈥?Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
鈥?UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 480mJ
鈥?Low Conduction Loss
IGBT formerly Developmental Type TA49342
Package
TO-247
Symbol
E
C
G
C
G
COLLECTOR
(Back-Metal)
E
Device Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
BV
CES
I
C25
I
C110
I
CM
V
GES
V
GEM
SSOA
E
AS
P
D
T
J
T
STG
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T
C
= 25擄C
Collector Current Continuous, T
C
= 110擄C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
Switching Safe Operating Area at T
J
= 150擄C, Figure 2
Pulsed Avalanche Energy, I
CE
= 30A, L = 1mH, V
DD
= 50V
Power Dissipation Total T
C
= 25擄C
Power Dissipation Derating T
C
> 25擄C
Operating Junction Temperature Range
Storage Junction Temperature Range
Ratings
600
75
60
240
鹵20
鹵30
150A at 600V
480
463
3.7
-55 to 150
-55 to 150
mJ
W
W/擄C
擄C
擄C
Units
V
A
A
A
V
V
CAUTION: Stresses above those listed in 鈥淒evice Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
漏2003 Fairchild Semiconductor Corporation
FGH50N6S2 RevA3

FGH50N6S2 產品屬性

  • 150

  • 分離式半導體產品

  • IGBT - 單路

  • -

  • -

  • 600V

  • 2.7V @ 15V，30A

  • 75A

  • 463W

  • 標準型

  • 通孔

  • TO-247-3

  • TO-247

  • 管件

  • FGH50N6S2_NLFGH50N6S2_NL-ND

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