FGD3N60LSD IGBT
July 2005
FGD3N60LSD
IGBT
Features
鈥?High Current Capability
鈥?Very Low Saturation Voltage : V
CE(sat)
= 1.2 V @ I
C
= 3A
鈥?High Input Impedance
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide
very low conduction losses. The device is designed for applica-
tions where very low On-Voltage Drop is a required feature.
Applications
鈥?HID Lamp Applications
鈥?Piezo Fuel Injection Applications
C
C
G
G
E
D-PAK
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Derating Factor
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from Case for 5 Seconds
@ T
C
= 25擄C
@ T
C
= 100擄C
@ T
C
= 25擄C
@ T
C
= 100擄C
FGD3N60LSD
600
鹵
20
6
3
25
3
25
40
0.32
-55 to +150
-55 to +150
250
Units
V
V
A
A
A
A
A
W
W/擄C
擄C
擄C
擄C
Thermal Characteristics
Symbol
R
胃JC
(IGBT)
R
胃JA
Notes :
(2) Mounted on 1鈥?squre PCB (FR4 or G-10 Material)
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Typ.
--
--
Max.
3.1
100
Units
擄C/W
擄C/W
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGD3N60LSD Rev. A