FFP08S60S Stealth 2 Rectifier
April 2007
FFP08S60S
Stealth 2 Rectifier
Features
鈥?High Speed Switching ( Max. t
rr
<30ns @ I
F
=8A )
鈥?High Reverse Voltage and High Reliability
鈥?Avalanche Energy Rated
tm
8A, 600V Stealth2 Rectifier
The FFP08S60S is stealth 2 rectifier with soft recovery charac-
teristics (t
rr
<30ns). They has half the recovery time of hyperfast
rectifier and are silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as freewheeling of boost diode
in switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching
circuits reducing power loss in the switching transistors.
Applications
鈥?General Purpose
鈥?Switching Mode Power Supply
鈥?Boost Diode in continuous mode power factor corrections
鈥?Power switching circuits
Pin Assignments
TO-220-2L
1. Cathode
2. Anode
1
1. Cathode
2
2. Anode
Absolute Maximum Ratings
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J,
T
STG
T
C
= 25擄C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
= 25擄C unless otherwise noted
Value
600
600
600
@ T
C
= 115
擄C
8
80
- 65 to +150
Units
V
V
V
A
A
擄C
Thermal Characteristics
T
Symbol
R
胃JC
C
Parameter
Maximum Thermal Resistance, Junction to Case
Max
2.5
Units
擄C/W
Package Marking and Ordering Information
Device Marking
F08S60S
Device
FFP08S60STU
Package
TO-220-2L
Reel Size
-
Tape Width
-
Quantity
50
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FFP08S60S Rev. A
1
2
3
4
5
