FFP08S60SN
April 2008
FFP08S60SN
Features
鈥?High Speed Switching, t
rr
< 25ns @ I
F
= 8A
鈥?High Reverse Voltage and High Reliability
鈥?RoHS compliant
STEALTH
TM
II Rectifier
tm
8A, 600V STEALTH
TM
II Rectifier
The FFP08S60SN is STEALTH
TM
II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Applications
鈥?General Purpose
鈥?Switching Mode Power Supply
鈥?Boost Diode in continuous mode power factor corrections
鈥?Power switching circuits
TO-220-2L
1. Cathode
2. Anode
1. Cathode
2. Anode
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J
, T
STG
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating and Storage Temperature Range
@ T
C
= 89 C
o
Parameter
Ratings
600
600
600
8
60
-65 to +150
Units
V
V
V
A
A
o
C
Thermal Characteristics
Symbol
R
胃JC
Parameter
Maximum Thermal Resistance, Junction to Case
Ratings
3.6
Units
o
C/W
Package Marking and Ordering Information
Device Marking
F08S60SN
Device
FFP08S60SNTU
Package
TO220-2L
Reel Size
-
Tape Width
-
Quantity
50
漏2008 Fairchild Semiconductor Corporation
FFP08S60SN Rev. A
1
www.fairchildsemi.com
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