30V, 55A, 11.5m鈩?/div>
Features
!
r
DS(ON)
= 11.5m鈩?V
GS
= 10V, I
D
= 35A
,
!
r
DS(ON)
= 15m鈩? V
GS
= 4.5V, I
D
= 35A
!
High performance trench technology for extremely low
r
DS(ON)
!
Low gate charge
!
High power and current handling capability
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Application
!
DC/DC converters
D
G
S
I-PAK
(TO-251AA)
G D S
G
D
D-PAK
TO-252
(TO-252)
S
漏2004 Fairchild Semiconductor Corporation
FDD8882/FDU8882 Rev. 1.0.0
1
www.fairchildsemi.com