FDS9934C
February 2004
FDS9934C
Complementary
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor鈥檚 advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
鈥?/div>
Q1:
6.5 A, 20 V. R
DS(ON)
= 30 m鈩?@ V
GS
= 4.5 V
R
DS(ON)
= 43 m鈩?@ V
GS
= 2.5 V.
鈥?/div>
Q2:
鈥? A, 鈥?0 V, R
DS(ON)
= 55 m鈩?@ V
GS
= 鈥?.5 V
R
DS(ON)
= 90 m鈩?@ V
GS
= 鈥?.5 V
D1
D
D1
D
D2
D
D
D2
5
6
Q2
4
3
Q1
SO-8
Pin 1
SO-8
G1
S1
S
G2
S2
G
7
8
2
1
S
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
A
=25
o
C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
Ratings
Q1
20
鹵10
6.5
20
2
1.6
1
0.9
鈥?5 to +150
Units
V
V
A
W
Q2
鈥?0
鹵12
鈥?
鈥?0
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDS9934C
Device
FDS9934C
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
漏2004
Fairchild Semiconductor Corporation
FDS9934C Rev C(W)
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