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FDS8958 Datasheet

  • FDS8958

  • Dual N & P-Channel PowerTrench MOSFET

  • 8頁

  • FAIRCHILD

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FDS8958
October 2004
FDS8958
Dual N & P-Channel PowerTrench
廬
MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor鈥檚 advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
鈥?/div>
鈥?/div>
Features
鈥?/div>
Q1:
N-Channel
R
DS(on)
= 0.028鈩?@ V
GS
= 10V
R
DS(on)
= 0.040鈩?@ V
GS
= 4.5V
鈥?/div>
Q2:
P-Channel
R
DS(on)
= 0.052鈩?@ V
GS
= -10V
R
DS(on)
= 0.080鈩?@ V
GS
= -4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
7.0A, 30V
-5A, -30V
D1
D
D1
D
D2
D
D
D2
5
6
Q2
4
3
Q1
SO-8
Pin 1
SO-8
G1
S1
S
G2
S2
G
7
8
2
1
S
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25擄C unless otherwise noted
Parameter
Q1
30
(Note 1a)
Q2
30
鹵20
-5
-20
2
1.6
1
0.9
-55 to +150
Units
V
V
A
W
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Drain Current
鹵20
7
20
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
擄C/W
擄C/W
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
Package Marking and Ordering Information
Device Marking
FDS8958
Device
FDS8958
Reel Size
13鈥?/div>
Tape width
12mm
Quantity
2500 units
漏2004
Fairchild Semiconductor Corporation
FDS8958 Rev A(W)

FDS8958 產品屬性

  • High Voltage Switches for Power Processing

  • 2,500

  • 分離式半導體產品

  • FET - 陣列

  • -

  • N 和 P 溝道

  • 邏輯電平門

  • 30V

  • 7A，5A

  • 28 毫歐 @ 7A，10V

  • 3V @ 250µA

  • 26nC @ 10V

  • 789pF @ 10V

  • 900mW

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 帶卷 (TR)

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