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FDS8936A Datasheet

  • FDS8936A

  • Dual N-Channel Enhancement Mode Field Effect Transistor

  • 4頁

  • FAIRCHILD

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May 1998
FDS8936A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
6 A, 30 V. R
DS(ON)
= 0.028
鈩?/div>
@ V
GS
= 10 V,
R
DS(ON)
= 0.040
鈩?/div>
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D2
D1
D1
D2
5
4
3
2
1
S
FD 6A
3
89
pin
1
6
G2
7
8
SO-8
S1
G1
S2
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25
o
C unless otherwise noted
FDS8936A
30
鹵20
(Note 1a)
Units
V
V
A
6
20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
1.6
1
0.9
-55 to 150
擄C
T
J
,T
STG
R
胃
JA
R
胃
JC
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
漏 1998 Fairchild Semiconductor Corporation
FDS8936A Rev.B

FDS8936A 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 30 V

  • +/- 20 V

  • 6 A

  • 0.028 Ohms

  • Dual Dual Drain

  • + 150 C

  • SMD/SMT

  • SOIC-8 Narrow

  • Reel

  • 9 ns

  • - 55 C

  • 2 W

  • 14 ns

  • 23 ns

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