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FDS8928A Datasheet

  • FDS8928A

  • Dual N & P-Channel Enhancement Mode Field Effect Transistor

  • 12頁

  • FAIRCHILD

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July 1998
FDS8928A
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
Features
N-Channel 5.5 A,30 V, R
DS(ON)
=0.030
鈩?/div>
@ V
GS
=4.5 V
R
DS(ON)
=0.038
鈩?/div>
@ V
GS
=2.5 V.
P-Channel -4 A,-20 V, R
DS(ON)
=0.055
鈩?/div>
@ V
GS
=-4.5 V
R
DS(ON)
=0.072
鈩?/div>
@ V
GS
=-2.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
SOT-23
SuperSOT
TM
-6
SuperSOT -8
TM
SO-8
SOT-223
SOIC-16
D2
D1
D1
D2
5
6
7
4
3
2
1
DS A
F 8
2
89
S2
G2
G1
8
SO-8
pin
1
S1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
P
D
T
A
= 25擄C unless otherwise noted
N-Channel
30
8
(Note 1a)
P-Channel
-20
-8
-4
-20
2
Units
V
V
A
5.5
20
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
1.6
1
0.9
-55 to 150
擄C
T
J
,T
STG
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R
胃JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
漏 1998 Fairchild Semiconductor Corporation
FDS8928A Rev. B

FDS8928A 產品屬性

  • High Voltage Switches for Power Processing

  • 2,500

  • 分離式半導體產品

  • FET - 陣列

  • -

  • N 和 P 溝道

  • 邏輯電平門

  • 30V，20V

  • 5.5A，4A

  • 30 毫歐 @ 5.5A，4.5V

  • 1V @ 250µA

  • 28nC @ 4.5V

  • 900pF @ 10V

  • 900mW

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SOICN

  • 帶卷 (TR)

  • FDS8928ATR

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