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FDS6990 Datasheet

  • FDS6990

  • Dual 30V N-Channel PowerTrench SyncFET

  • 6頁(yè)

  • FAIRCHILD

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FDS6990S
May 2001
FDS6990S
Dual 30V N-Channel PowerTrench
廬
SyncFET
鈩?/div>
General Description
The FDS6990S is designed to replace a dual SO-8
MOSFET and two Schottky diodes in synchronous
DC:DC power supplies. This 30V MOSFET is designed
to maximize power conversion efficiency, providing a
low R
DS(ON)
and low gate charge. Each MOSFET
includes integrated Schottky diodes using Fairchild鈥檚
monolithic SyncFET technology. The performance of
the FDS6990S as the low-side switch in a synchronous
rectifier is similar to the performance of the FDS6990A
in parallel with a Schottky diode.
Features
鈥?/div>
7.5A, 30 V.
R
DS(ON)
= 22 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 30 m鈩?@ V
GS
= 4.5 V
鈥?/div>
鈥?/div>
鈥?/div>
Includes SyncFET Schottky diode
Low gate charge (11 nC typical)
High performance trench technology for extremely low
R
DS(ON)
鈥?/div>
High power and current handling capability
Applications
鈥?/div>
DC/DC converter
鈥?/div>
Motor drives
D
D2
D2
D
D
D1
D1
D
5
Q1
4
3
2
Q2
6
7
G1
SO-8
Pin 1
SO-8
S1
G
G2
S
S2
S
8
1
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
鹵20
(Note 1a)
Units
V
V
A
W
7.5
20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
鈥?5 to +150
擄C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDS6990S
漏2001
Fairchild Semiconductor Corporation
Device
FDS6990S
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
FDS6990S Rev B(W)

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