鈩?/div>
General Description
The FDS6984S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6984S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild鈥檚 monolithic SyncFET technology.
Features
鈥?/div>
Q2:
Optimized to minimize conduction losses
Includes SyncFET Schottky diode
R
DS(on)
= 19 m鈩?/div>
=
@ V
GS
= 10V
R
DS(on)
= 28 m鈩?/div>
=
@ V
GS
= 4.5V
鈥?/div>
Q1:
Optimized for low switching losses
Low gate charge ( 5 nC typical)
R
DS(on)
= 0.040鈩?/div>
=
@ V
GS
= 10V
R
DS(on)
= 0.055鈩?/div>
=
@ V
GS
= 4.5V
8.5A, 30V
5.5A, 30V
D1
D1
D2
D2
S1
G1
5
6
7
Q1
4
3
2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25擄C unless otherwise noted
Parameter
Q2
30
(Note 1a)
Q1
30
鹵20
5.5
20
2
1.6
1
0.9
-55 to +150
Units
V
V
A
W
- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Drain Current
鹵20
8.5
30
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDS6984S
Device
FDS6984S
Reel Size
13鈥?/div>
Tape width
12mm
Quantity
2500 units
餂?000
Fairchild Semiconductor Corporation
FDS6984S Rev C(W)
FDS6984SQ1相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
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