鈩?/div>
@ V
GS
= -2.5 V.
Low gate charge (23nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
High power and current handling capability.
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D2
D1
D1
D2
5
4
3
2
1
S
FD 75
68
G1
S2
G2
6
7
8
SO-8
pin
1
S1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25
o
C unless otherwise noted
FDS6875
-20
鹵8
(Note 1a)
Units
V
V
A
-6
-20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
1.6
1
0.9
-55 to 150
擄C
T
J
,T
STG
R
胃
JA
R
胃
JC
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
FDS6875 Rev.C
漏 1998 Fairchild Semiconductor Corporation