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FDS5690 Datasheet

  • FDS5690

  • 60V N-Channel PowerTrench MOSFET

  • 8頁

  • FAIRCHILD

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FDS5690
March 2000
FDS5690
60V N-Channel PowerTrench
餂?/div>
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
鈥?/div>
7 A, 60 V. R
DS(on)
= 0.028
鈩?/div>
@ V
GS
= 10 V
R
DS(on)
= 0.033
鈩?/div>
@ V
GS
= 6 V.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
Applications
鈥?/div>
鈥?/div>
DC/DC converter
Motor drives
D
D
D
D
5
6
7
4
3
2
1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
= 25擄C unless otherwise noted
Parameter
Ratings
60
(Note 1a)
Units
V
V
A
W
鹵
20
7
50
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
擄
C
Thermal Characteristics
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
擄
C/W
擄
C/W
Package Outlines and Ordering Information
Device Marking
FDS5690
Device
FDS5690
Reel Size
13鈥欌€?/div>
Tape Width
12mm
Quantity
2500 units
錚?/div>
2000 Fairchild Semiconductor Corporation
FDS5690 Rev. C

FDS5690 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 7A

  • 28 毫歐 @ 7A，10V

  • 4V @ 250µA

  • 32nC @ 10V

  • 1107pF @ 30V

  • 1W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SO

  • 帶卷 (TR)

  • FDS5690-NDFDS5690TR

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