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FDS5680 Datasheet

  • FDS5680

  • 60V N-Channel PowerTrench⑩ MOSFET

  • 8頁

  • FAIRCHILD

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FDS5680
July 1999
FDS5680
60V N-Channel PowerTrench
TM
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
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8 A, 60 V. R
DS(ON)
= 0.020
鈩?/div>
@ V
GS
= 10 V
R
DS(ON)
= 0.025
鈩?/div>
@ V
GS
= 6 V.
Low gate charge (30nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
Applications
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DC/DC converter
Load switch
Motor drives
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
= 25擄C unless otherwise noted
Parameter
Ratings
60
(Note 1a)
Units
V
V
A
W
鹵20
8
50
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃
JA
R
胃
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
擄C/W
擄C/W
Package Outlines and Ordering Information
Device Marking
FDS5680
Device
FDS5680
Reel Size
13鈥欌€?/div>
Tape Width
12mm
Quantity
2500 units
錚?999
Fairchild Semiconductor Corporation
FDS5680 Rev. C

FDS5680 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 2,500

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 8A

  • 20 毫歐 @ 8A，10V

  • 4V @ 250µA

  • 42nC @ 10V

  • 1850pF @ 15V

  • 1W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • SO-8

  • 帶卷 (TR)

  • FDS5680-NDFDS5680TR

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