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MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Features
4.7 A, 80 V.
R
DS(ON)
= 44 m鈩?@ V
GS
= 10 V
R
DS(ON)
= 50 m鈩?@ V
GS
= 6 V
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Fast switching speed
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High performance trench technology for extremely
low R
DS(ON)
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High power and current handling capability
D1
D1
D2
D2
S1
G1
5
6
7
Q1
4
3
2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
80
鹵
20
(Note 1a)
Units
V
V
A
W
4.7
20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1.0
0.9
鈥?5 to +175
擄C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDS3890
Device
FDS3890
Reel Size
13鈥欌€?/div>
Tape width
12mm
Quantity
2500 units
餂?001
Fairchild Semiconductor Corporation
FDS3890 Rev B(W)
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