FDR858P Datasheet

IC型號(hào)：
FDR858P
PDF描述：
Single P-Channel, Logic Level, PowerTrenchTM MOSFET
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PDF頁(yè)數(shù)：
8頁(yè)
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FAIRCHILD

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February 1999

FDR858P

Single P-Channel, Logic Level, PowerTrench

MOSFET

General Description

The SuperSOT-8 family of P-Channel Logic Level

MOSFETs have been designed to provide a low profile,

small footprint alternative to industry standard SO-8 little

foot type product.

This P-Channel Logic Level MOSFET is produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize the

on-state resistance and yet maintain low gate charge for

superior switching performance.

These devices are well suited for notebook computer

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

Features

-8 A, -30 V. R

DS(ON)

= 0.019

鈩?/div>

@ V

= -10 V,

DS(ON)

= 0.028

鈩?/div>

@ V

= -4.5 V.

Low gate charge (21nC typical).

High performance trench technology for extremely low

DS(ON)

SuperSOT

-8 package: small footprint (40%) less than

SO-8); low profile (1mm thick); maximum power

comperable to SO-8.

SOT-23

SuperSOT

-6

SuperSOT

-8

SO-8

SOT-223

SOIC-16

SuperSOT -8

Mark: 858P

Absolute Maximum Ratings

Symbol

Parameter

= 25

C unless otherwise noted

Ratings

Units

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage

Draint Current - Continuous

- Pulsed

Maximum Power Dissipation

(Note 1a)

(Note 1b)

(Note 1c)

-30

鹵20

(Note 1)

-8

-50

1.8

0.9

-55 to 150

STG

胃

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄C/W

漏 1999 Fairchild Semiconductor Corporation

FDR858P Rev.C

標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET P 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門(mén)
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
8A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C
19 毫歐 @ 8A，10V
Id 時(shí)的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
30nC @ 5V
輸入電容 (Ciss) @ Vds
2010pF @ 15V
功率 - 最大
900mW
安裝類型
表面貼裝
封裝/外殼
8-SSOT，SuperSOT-8
供應(yīng)商設(shè)備封裝
8-SSOT
包裝
帶卷 (TR)
其它名稱
FDR858P-NDFDR858PTR

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