FDN338P Datasheet

IC型號(hào)：
FDN338P
PDF描述：
P-Channel Logic Level Enhancement Mode Field Effect Transist...
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FAIRCHILD

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March 1998

FDN338P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

SuperSOT

-3 P-Channel logic level enhancement mode

power field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance. These devices are particularly suited for

low voltage applications in notebook computers, portable

phones, PCMCIA cards, and other battery powered circuits

where fast switching, and low in-line power loss are needed

in a very small outline surface mount package.

Features

-1.6 A, -20 V, R

DS(ON)

= 0.13

鈩?/div>

@ V

= -4.5 V

DS(ON)

= 0.18

鈩?/div>

@ V

= -2.5 V.

Industry standard outline SOT-23 surface mount

package using proprietary SuperSOT

-3 design for

superior thermal and electrical capabilities.

High density cell design for extremely low R

DS(ON)

Exceptional on-resistance and maximum DC current

capability.

SuperSOT

-3

SuperSOT

-6

SuperSOT -8

SO-8

SOT-223

SOIC-16

SuperSOT -3

Absolute Maximum Ratings

Symbol

DSS

GSS

STG

胃

Parameter

Drain-Source Voltage

= 25

C unless other wise noted

FDN338P

-20

鹵8

-1.6

-5

(Note 1a)

(Note 1b)

Units

Gate-Source Voltage - Continuous

Drain/Output Current - Continuous

- Pulsed

Maximum Power Dissipation

0.5

0.46

-55 to 150

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

擄C/W

漏 1998 Fairchild Semiconductor Corporation

FDN338P Rev.D

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power ProcessingSMPS Power Switch
標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET P 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
20V
電流 - 連續(xù)漏極(Id) @ 25° C
1.6A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
115 毫歐 @ 1.6A，4.5V
Id 時(shí)的 Vgs(th)（最大）
1.5V @ 250µA
閘電荷(Qg) @ Vgs
6.2nC @ 4.5V
輸入電容 (Ciss) @ Vds
451pF @ 10V
功率 - 最大
460mW
安裝類型
表面貼裝
封裝/外殼
TO-236-3，SC-59，SOT-23-3
供應(yīng)商設(shè)備封裝
3-SSOT
包裝
帶卷 (TR)
其它名稱
FDN338PTR

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