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MOSFET

General Description

This P-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain superior

switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

鈥?/div>

-1.6 A, -30 V. R

DS(ON)

= 0.19

鈩?/div>

@ V

GS

= -10 V

R

DS(ON)

= 0.30

鈩?/div>

@ V

GS

= -4.5 V.

鈥?/div>

Low gate charge (3.5nC typical).

High performance trench technology for extremely low

R

DS(ON)

.

Compact industry standard SC70-6 surface mount

package.

Applications

鈥?/div>

DC/DC converter

Load switch

Power Management

D

S

1

6

2

5

SC70-6

D

G

3

4

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

I

D

P

D

T

J

, T

stg

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

T

A

= 25擄C unless otherwise noted

Parameter

Ratings

-30

(Note 1a)

Units

V

A

W

擄C

鹵20

-1.6

-6

0.75

0.48

-55 to +150

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

Operating and Storage Junction Tem perature Range

Thermal Characteristics

R

胃

JA

Therm al Resistance, Junction-to-Am bient

(Note 1b)

260

擄C/W

Package Marking and Ordering Information

Device Marking

.

36

Device

FDG316P

Reel Size

7鈥欌€?/div>

Tape W idth

8m m

Quantity

3000 units

錚?001

Fairchild Semiconductor Corporation

FDG316P Rev. D

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET P 通道，金屬氧化物
FET 特點(diǎn)
邏輯電平門
漏極至源極電壓(Vdss)
30V
電流 - 連續(xù)漏極(Id) @ 25° C
1.6A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
190 毫歐 @ 1.6A，10V
Id 時(shí)的 Vgs(th)（最大）
3V @ 250µA
閘電荷(Qg) @ Vgs
5nC @ 10V
輸入電容 (Ciss) @ Vds
165pF @ 10V
功率 - 最大
480mW
安裝類型
表面貼裝
封裝/外殼
6-TSSOP，SC-88，SOT-363
供應(yīng)商設(shè)備封裝
SC-70-6
包裝
帶卷 (TR)
其它名稱
FDG316P-NDFDG316PTR

FDG316P相關(guān)型號(hào)PDF文件下載

型號(hào)

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