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FDD6680AS_NL Datasheet

  • FDD6680AS_NL

  • 30V N-Channel PowerTrench SyncFET

  • 8頁(yè)

  • FAIRCHILD

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FDD6680AS
December 2004
FDD6680AS
General Description
30V N-Channel PowerTrench
廬
SyncFET
鈩?/div>
Features
鈥?/div>
55 A, 30 V
R
DS(ON)
max= 10.5 m鈩?@ V
GS
= 10 V
R
DS(ON)
max= 13.0 m鈩?@ V
GS
= 4.5 V
鈥?/div>
Includes SyncFET Schottky body diode
鈥?/div>
Low gate charge (21nC typical)
鈥?/div>
High performance trench technology for extremely
low R
DS(ON)
鈥?/div>
High power and current handling capability
.
The FDD6680AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
and low gate charge.
The FDD6680AS
R
DS(ON)
includes an integrated Schottky diode using Fairchild鈥檚
monolithic SyncFET technology. The performance of
the FDD6680AS as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDD6680A in parallel with a
Schottky diode.
Applications
鈥?/div>
DC/DC converter
鈥?/div>
Low side notebook
D
D
G
S
TO-252
S
G
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
鈥?Continuous
鈥?Pulsed
Power Dissipation
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
30
鹵20
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
Unit
s
V
V
A
W
55
100
60
3.1
1.3
鈥?5 to +150
T
J
, T
STG
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.1
40
96
擄C/W
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDD6680AS
FDD6680AS
Device
FDD6680AS
FDD6680AS_NL
(Note 4)
Reel Size
13鈥欌€?/div>
13鈥欌€?/div>
Tape width
16mm
16mm
Quantity
2500 units
2500 units
FDD6680AS Rev A(X)
漏2004
Fairchild Semiconductor Corporation

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