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FDD5670 Datasheet

  • FDD5670

  • 60V N-Channel PowerTrenchTM MOSFET

  • 5頁

  • FAIRCHILD

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FDD5670
March 1999
ADVANCE INFORMATION
FDD5670
60V N-Channel PowerTrench
TM
MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching
PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
鈥?/div>
48 A, 60 V. R
DS(ON)
= 0.015
鈩?/div>
@ V
GS
= 10 V
R
DS(ON)
= 0.018
鈩?/div>
@ V
GS
= 6 V.
鈥?/div>
鈥?/div>
鈥?/div>
Low gate charge.
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON
)
.
D
D
G
S
TO-252
S
G
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Gate-Source Voltage
Maximum Drain Current
Maximum Drain Current
P
D
Drain-Source Voltage
T
C
=25
o
C unless otherwise noted
Parameter
Ratings
60
鹵20
Units
V
V
A
-Continuous
-Pulsed
o
(Note 1)
(Note 1a)
48
10
100
70
2.8
1.3
-55 to +150
Maximum Power Dissipation @ T
C
= 25 C
T
A
= 25 C
T
A
= 25 C
o
o
(Note 1)
(Note 1a)
(Note 1b)
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
擄C
Thermal Characteristics
R
胃
JC
R
胃
JA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
1.8
96
擄C/W
擄C/W
Package Marking and Ordering Information
Device Marking
FDD5670
漏1999
Fairchild Semiconductor Corporation
Device
FDD5670
Reel Size
13鈥欌€?/div>
Tape width
16mm
Quantity
2500
FDD5670 Rev. A

FDD5670 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 2,500

  • 分離式半導體產(chǎn)品

  • FET - 單

  • PowerTrench®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 52A

  • 15 毫歐 @ 10A，10V

  • 4V @ 250µA

  • 73nC @ 10V

  • 2739pF @ 15V

  • 1.6W

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • TO-252

  • 帶卷 (TR)

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