FDC653 Datasheet

IC型號(hào)：
FDC653
PDF描述：
N-Channel Enhancement Mode Field Effect Transistor
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73.57KB
PDF頁(yè)數(shù)：
4頁(yè)
芯片廠家：
FAIRCHILD

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November 1997

FDC653N

N-Channel Enhancement Mode Field Effect Transistor

General Description

This N-Channel enhancement mode power field effect

transistors is produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

tailored to minimize on-state resistance. These devices are

particularly suited for low voltage applications in notebook

computers, portable phones, PCMICA cards, and other

battery powered circuits where fast switching, and low in-line

power loss are needed in a very small outline surface mount

package.

Features

5 A, 30 V. R

DS(ON)

= 0.035

鈩?/div>

@ V

= 10 V

DS(ON)

= 0.055

鈩?/div>

@ V

= 4.5 V.

Proprietary SuperSOT

-6 package design using copper

lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low R

DS(ON)

Exceptional on-resistance and maximum DC current

capability.

SOT-23

SuperSOT

-6

SuperSOT

-8

SO-8

SOT-223

SOIC-16

SuperSOT

-6

Absolute Maximum Ratings

Symbol Parameter

DSS

GSS

Drain-Source Voltage

Gate-Source Voltage - Continuous

Drain Current - Continuous

- Pulsed

Maximum Power Dissipation

= 25擄C unless otherwise note

FDC653N

鹵20

(Note 1a)

Units

(Note 1a)

(Note 1b)

1.6

0.8

-55 to 150

STG

胃JA

胃JC

Operating and Storage Temperature Range

擄C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

擄C/W

漏 1997 Fairchild Semiconductor Corporation

FDC653N Rev.C

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