鈩?/div>
@ V
GS
= -2.5 V.
Low gate charge (13nC typical).
High performance trench technology for extremely low R
DS(ON)
.
SuperSOT -6 package: small footprint (72% smaller than standard
SO-8); low profile (1mm thick).
TM
SOT-23
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
S
D
D
1
6
.63
pin
1
8
2
G
D
D
5
SuperSOT
TM
-6
3
4
Absolute Maximum Ratings
Symbol Parameter
V
DSS
V
GSS
I
D
Drain-Source Voltage
T
A
= 25擄C unless otherwise note
Ratings
-20
鹵8
(Note 1a)
Units
V
V
A
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
-4.5
-20
P
D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
1.6
0.8
-55 to 150
W
T
J
,T
STG
Operating and Storage Temperature Range
擄C
THERMAL CHARACTERISTICS
R
胃JA
R
胃JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
擄C/W
擄C/W
漏1999 Fairchild Semiconductor
FDC638P Rev.D