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FDC637AN

November 1999

FDC637AN

Single N-Channel, 2.5V Specified PowerTrench

TM

MOSFET

General Description

This N-Channel 2.5V specified MOSFET is produced

using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored

to minimize on-state resistance and yet maintain low

gate charge for superior switching performance.

These devices have been designed to offer exceptional

power dissipation in a very small footprint compared

with bigger SO-8 and TSSOP-8 packages.

Features

鈥?/div>

6.2 A, 20 V. R

DS(on)

= 0.024

鈩?/div>

@ V

GS

= 4.5 V

R

DS(on)

= 0.032

鈩?/div>

@ V

GS

= 2.5 V

鈥?/div>

Fast switching speed.

Low gate charge (10.5nC typical).

High performance trench technology for extremely

low R

DS(ON)

.

SuperSOT

TM

-6 package: small footprint (72% smaller

than standard SO-8); low profile (1mm thick).

Applications

鈥?/div>

DC/DC converter

Load switch

Battery Protection

D

S

1

6

2

5

SuperSOT -6

TM

D

G

3

4

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

I

D

P

D

T

J

, T

stg

Drain-Source Voltage

Gate-Source Voltage

Drain Current

- Continuous

- Pulsed

T

A

= 25擄C unless otherwise noted

Parameter

FDC637AN

20

鹵8

(Note 1a)

Units

V

A

W

擄C

6.2

20

1.6

0.8

-55 to +150

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics

R

胃JA

R

胃JC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

78

30

擄C/W

Package Outlines and Ordering Information

Device Marking

.637

Device

FDC637AN

Reel Size

7鈥欌€?/div>

Tape Width

8mm

Quantity

3000 units

錚?999

Fairchild Semiconductor Corporation

FDC637AN, Rev. C

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power Processing
標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
PowerTrench®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
20V
電流 - 連續(xù)漏極(Id) @ 25° C
6.2A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
24 毫歐 @ 6.2A，4.5V
Id 時的 Vgs(th)（最大）
1.5V @ 250µA
閘電荷(Qg) @ Vgs
16nC @ 4.5V
輸入電容 (Ciss) @ Vds
1125pF @ 10V
功率 - 最大
800mW
安裝類型
表面貼裝
封裝/外殼
SOT-23-6 細(xì)型，TSOT-23-6
供應(yīng)商設(shè)備封裝
6-SSOT
包裝
帶卷 (TR)
其它名稱
FDC637AN-NDFDC637ANTR

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FDC637AN Datasheet

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