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FDB14N30TM Datasheet

  • FDB14N30TM

  • 300V N-Channel MOSFET

  • 8頁(yè)

  • FAIRCHILD

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FDB14N30 300V N-Channel MOSFET
FDB14N30
300V N-Channel MOSFET
Features
鈥?14A, 300V, R
DS(on)
= 0.29惟 @V
GS
= 10 V
鈥?Low gate charge ( typical 18 nC)
鈥?Low C
rss
( typical 17 pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
UniFET
Description
February 2007
TM
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
D
G
D
2
-PAK
G
S
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FDB14N30
300
14
8.4
56
鹵30
330
14
14
4.5
140
1.12
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃JA*
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Min.
--
--
--
Max.
0.89
40
62.5
Unit
擄C/W
擄C/W
擄C/W
* When mounted on the minimum pad size recommended (PCB Mount)
漏2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDB14N30 Rev. A

FDB14N30TM 產(chǎn)品屬性

  • 800

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UniFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 300V

  • 14A

  • 290 毫歐 @ 7A，10V

  • 5V @ 250µA

  • 25nC @ 10V

  • 1060pF @ 25V

  • 140W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D²PAK

  • 帶卷 (TR)

  • FDB14N30TMTR

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