音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

FDB12N50TM Datasheet

  • FDB12N50TM

  • N-Channel MOSFET 500V, 11.5A, 0.65ヘ

  • 9頁(yè)

  • FAIRCHILD

掃碼查看芯片數(shù)據(jù)手冊(cè)

上傳產(chǎn)品規(guī)格書(shū)

PDF預(yù)覽

FDB12N50 / FDI12N50 N-Channel MOSFET
June 2007
FDB12N50TM
N-Channel MOSFET
500V, 11.5A, 0.65惟
Features
鈥?R
DS(on)
= 0.55惟 ( Typ.)@ V
GS
= 10V, I
D
= 6A
鈥?Low gate charge ( Typ. 22nC)
鈥?Low C
rss
( Typ. 12pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
鈥?RoHS compliant
UniFET
TM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
D
G
G
S
D
2
-PAK
FDB Series
G D S
I
2
-PAK
FDI Series
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25 C)
o
Parameter
Ratings
500
鹵30
25
o
C)
o
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
o
-Continuous (T
C
=
- Pulsed
11.5
6.9
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
46
456
11.5
16.7
4.5
165
1.33
-55 to +150
300
-Continuous (T
C
= 100 C)
- Derate above 25 C
o
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
C
C
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
*
R
胃JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient*
Thermal Resistance, Junction to Ambient
Ratings
0.75
40
62.5
o
Units
C/W
*When mounted on the minimum pad size recommended (PCB Mount)
漏2007 Fairchild Semiconductor Corporation
FDB12N50TM Rev. A1
1
www.fairchildsemi.com

FDB12N50TM 產(chǎn)品屬性

  • 800

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UniFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 500V

  • 11.5A

  • 650 毫歐 @ 6A，10V

  • 5V @ 250µA

  • 30nC @ 10V

  • 1315pF @ 25V

  • 165W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D²PAK

  • 帶卷 (TR)

  • FDB12N50TMTR

FDB12N50TM相關(guān)型號(hào)PDF文件下載

您可能感興趣的PDF文件資料

熱門(mén)IC型號(hào)推薦

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買(mǎi)家服務(wù)：
賣(mài)家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時(shí)間周一至周五
9:00-17:30

關(guān)注官方微信號(hào)，
第一時(shí)間獲取資訊。

建議反饋
返回頂部

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫(kù)提出的寶貴意見(jiàn)，您的參與是維庫(kù)提升服務(wù)的動(dòng)力！意見(jiàn)一經(jīng)采納，將有感恩紅包奉上哦！