FDA16N50 500V N-Channel MOSFET
FDA16N50
500V N-Channel MOSFET
Features
鈥?16.5A, 500V, R
DS(on)
= 0.38惟 @V
GS
= 10 V
鈥?Low gate charge ( typical 32 nC)
鈥?Low C
rss
( typical 20 pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
UniFET
Description
April 2007
TM
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
TO-3P
G DS
FDA Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J,
T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T
C
= 25擄C)
- Derate above 25擄C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
FDA16N50
500
16.5
9.9
66
鹵30
780
16.5
20.5
4.5
205
2.1
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8鈥?from Case for 5 Seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Typ
--
0.24
--
Max
0.6
--
40
Unit
擄C/W
擄C/W
擄C/W
漏2007 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDA16N50 Rev. B