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FB1L3N Datasheet

  • FB1L3N

  • COMPOUND TRANSISTOR

  • 8頁

  • NEC   NEC

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上傳產品規(guī)格書

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DATA SHEET
COMPOUND TRANSISTOR
FB1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
FEATURES
鈥?Up to 0.7 A current drive available
鈥?On-chip bias resistor
鈥?Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
QUALITY GRADES
鈥?Standard
Please refer to 鈥淨uality Grades on NEC Semiconductor
Devices鈥?(Document No. C11531E) published by NEC Corporation
to know the specification of quality grade on the devices and its
recommended applications.
FB1 SERIES LISTS
Products
FB1A4A
FB1L2Q
FB1A3M
FB1F3P
FB1J3P
FB1L3N
FB1A4M
Marking
P30
P31
P32
P33
P36
P34
P35
R
1
(K鈩?
鈭?/div>
0.47
1.0
2.2
3.3
4.7
10
R
2
(K鈩?
10
4.7
1.0
10
10
10
10
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
T
j
T
stg
Ratings
30
25
10
0.7
1.0
20
200
150
鈭?5
to +150
Unit
V
V
V
A
A
mA
mW
擄C
擄C
* PW鈮?0 ms, duty cycle鈮?0 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16180EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998

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