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EB1500SOT89E-BE Datasheet

  • EB1500SOT89E-BE

  • LOW NOISE HIGH LINEARITY PACKAGED PHEMT

  • 12頁(yè)

  • FILTRONIC

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FPD1500SOT89
L
OW
N
OISE
H
IGH
L
INEARITY
P
ACKAGED P
HEMT
F
EATURES
(1850MH
Z
):
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
27.5 dBm Output Power (P1dB)
17 dB Small-Signal Gain (SSG)
1.2 dB Noise Figure
42 dBm Output IP3
50% Power-Added Efficiency
FPD1500SOT89E - RoHS compliant
Datasheet v3.0
P
ACKAGE
:
RoHS
G
ENERAL
D
ESCRIPTION
:
The FPD1500SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 碌m x 1500 碌m Schottky barrier
gate, defined by high-resolution stepper-based
photolithography. The double recessed gate
structure minimizes parasitics to optimize
performance, with an epitaxial structure
designed for improved linearity over a range of
bias conditions and i/p power levels.
T
YPICAL
A
PPLICATIONS
:
鈥?/div>
鈥?/div>
鈥?/div>
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
High intercept-point LNAs
WLL and WLAN systems, and other types
of wireless infrastructure systems.
E
LECTRICAL
S
PECIFICATIONS
:
P
ARAMETER
Power at 1dB Gain Compression
Small-Signal Gain
Power-Added Efficiency
S
YMBOL
P1dB
SSG
PAE
C
ONDITIONS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
M
IN
26.0
15.5
T
YP
27.5
17
50
M
AX
U
NITS
dBm
dB
%
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
1.0
1.2
dB
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
IP3
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
38
40
42
375
465
750
400
1
0.7
12
12
1.0
16
16
60
15
1.3
550
mA
mA
mS
碌A(chǔ)
V
V
V
擄C/W
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
R胃JC
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS
鈮?/div>
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 1.5 mA
IGS = 1.5 mA
IGD = 1.5 mA
Note: T
AMBIENT
= 22擄; RF specification measured at f = 1850 MHz using CW signal (except as noted)
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com

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