SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
E35A2CDS, E35A2CDR
STACK SILICON DIFFUSED DIODE
F
E
FEATURES
Average Forward Current : I
O
=35A.
Reverse Voltage : 200V(Min)
POLARITY
E35A2CDS
(+ Type)
E35A2CDR
(- Type)
G
L1
B
A
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Average Forward Current
Peak 1 Cycle Surge Current
Repetitive Peak Revese Voltage
Junction Temperature
Storage Temperature Range
)
SYMBOL
I
F(AV)
I
FSM
V
RRM
T
j
T
stg
RATING
35
350 (60Hz)
200
-40 200
-40 200
UNIT
A
A
V
DIM MILLIMETERS DIM MILLIMETERS
_
_
A
9.5 + 0.2
E
3.1+ 0.1
_
F
桅1.5
B
8.4 + 0.2
G
R0.5
C
1.2
_
L1
5 + 0.4
D
1
DIM TYPE POLARITY
S
L2
R
MILLIMETERS
_
19.0 + 1.0
_
23.0 + 1.0
PD
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Forward Voltage
Reverse Voltage
Reverse Current
Reverse Recovery Time
Reverse Leakage Current Under
High Temperature
Temperature Resistance
SYMBOL
V
F
V
R
I
R
t
rr
HI
R
R
th
TEST CONDITION
I
FM
=100A
I
R
=5mA
V
R
=200V
I
F
=0.1A, I
R
=0.1A
Ta=150 , V
R
=200v
DC total Junction to case
MIN.
-
200
-
-
-
-
TYP.
-
-
-
-
-
0.8
MAX.
1.05
-
50
15
2.5
-
UNIT
V
V
A
S
mA
/W
2002. 10. 9
Revision No : 1
C
D
L2
1/1
1
