SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
銉籄verage
Forward Current : I
O
=35A.
銉籞ener
Voltage : 21V(Typ.)
E35A21VBS, E35A21VBR
STACK SILICON DIFFUSED DIODE
A
POLARITY
E35A21VBS (+ Type) : Mark : ZG
E35A21VBR (- Type) : Mark : ZA
K
H
MAXIMUM RATING (Ta=25鈩?
CHARACTERISTIC
Average Forward Current
Peak 1 Cycle Surge Current
Non-Repetitive Peak
Reverse Surge Current
(10mS)
Transient Peak Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
I
F(AV)
I
FSM
I
RSM
V
RSM
V
RM
T
j
T
stg
RATING
35
300 (60Hz)
42
19
16
-40錕?frac12;錕?15
-40錕?frac12;錕?15
UNIT
A
A
A
G
B
J D
F
E I
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
桅11.5
MAX
桅12.75+0.09-0.00
_
桅1.3
+ 0.04
_
4.2+ 0.2
_
8.0 + 0.2
TYP 0.5
_
桅10.0
+ 0.2
_
0.4+ 0.1x45
8.5 MAX
0.2+0.1
_
28.35+ 0.5
B-PF
V
V
鈩?/div>
鈩?/div>
ELECTRICAL CHARACTERISTICS (Ta=25鈩?
CHARACTERISTIC
Peak Forward Voltage
Zener Voltage
Reverse Current
Transient Thermal Resistance
Breakdown Voltage
Temperature Coefficient
Reverse Leakage Current Under
High Temperature
Temperature Resistance
SYMBOL
V
F
V
Z
I
R
螖V
F
V
br
偽
T
HI
R
R
th
TEST CONDITION
I
FM
=100A
I
Z
=10mA
V
R
=18V
I
FM
=100A, I
M
=100mA, Pw=100mS
I
rsm
=42A, Pw=10mS
I
Z
=10mA
Ta=150鈩? V
R
=18V
DC total junction to case
MIN.
-
19
-
-
-
-
-
-
TYP.
-
21
-
-
-
15.7
-
-
MAX.
1.10
23
1
70
32
-
100
0.8
UNIT
V
V
渭
V
mV
V
mV/鈩?/div>
渭
A
鈩?W
2002. 4. 16
Revision No : 4
1/1
1
