SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : I
O
=25A.
Reverse Voltage : 200V(Min.)
E25A2CPS, E25A2CPR
STACK SILICON DIFFUSED DIODE
D
F2
E
POLARITY
E25A2CPS (+ Type)
E25A2CPR (- Type)
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Repetitive Peak
Reverse Voltage
Non-Repetitive Peak
Reverse Voltage
Average Forward Current
Peak 1 Cycle Surge Current
Junction Temperature
Storage Temperature Range
)
RATING
200
1.35
(Pulse duration 30 S
Non-repetitive)
25
250
(10mS Condition
Half sine wave 1 cycle)
-40 200
-40 200
UNIT
V
A
SYMBOL
V
RRM
P
RM
I
F(AV)
I
FSM
T
j
T
stg
DIM MILLIMETERS DIM MILLIMETERS
0.32
F1
桅11.7+0.1/-0
A
3.1
F2
3.85+0/-0.2
B
_
G
0.5
D
桅1.45
+ 0.1
L1
8.4 MAX
E
1.55
DIM TYPE POLARITY
S
L2
R
MILLIMETERS
17.5+0/-1.5
21.5+0/-1.5
kW
A
A
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Peak Forward Voltage
Reverse Voltage
Repetitive Peak Reverse Current
Reverse Recovery Time
Transient Thermal Resistance
Reverse Leakage Current Under
High Temperature
Temperature Resistance
SYMBOL
V
FM
V
RM
I
RRM
t
rr
V
F
HI
R
R
th
TEST CONDITION
I
FM
=100A
I
R
=5mA
V
R
=200V
I
F
=-I
R
100mA
I
FM
=100A, Im=100mA,
Pt=100mS
Ta=150 , V
R
=V
RM
Junction to Case
Junction to Fin
MIN.
-
200
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
MAX.
1.18
-
50
15
150
2.5
0.93
1.13
UNIT
V
V
A
S
mV
mA
B
PF
L1
L2
F1
/W
1998. 2. 19
Revision No : 0
1/1
1
